Integrated passive devices
US7259077B2 · kind B2 · utility
14Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Aug 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.