Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate
US7259085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Apr 29, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.