Producing method for solid-state image pickup device including formation of a carrier accumulating region
US7259361B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 7, 2006 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Mar 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention is to simplify a producing process for a solid-state image pickup device having pixels including MOS transistors, thereby improving productivity of the image pickup device. In a producing method for a solid-state image pickup device including pixels 100 each including a photoelectric conversion region 101 for generating photoelectrically a carrier and accumulating the carrier photoelectrically generated, a carrier accumulating portion 102 for accumulating a carrier overflowing from the photoelectric conversion region 101 in a period of carrier generation and accumulation thereof, and a MOS transistor Tx-MOS for transferring the carrier overflowing from the photoelectric conversion region 101, wherein a gate electrode of the MOS transistor Tx-MOS is formed in the same step as the step of forming a polysilicon film 118 constituting the first electroconductive film of the carrier accumulating portion 102.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.