On-axis electron impact ion source
US7259379B2 · kind B2 · utility
2Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2005 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Feb 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/063
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.