Integrated sensor
US7259545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2003 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Nov 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/4903
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated sensor includes a magnetoresistance element electrically coupled to a device disposed on or integrated in a silicon substrate. A conductor is provided proximate to the magnetoresistance element. The integrated sensor can be used to provide various devices, such as a current sensor, a magnetic field sensor, or an isolator. Further, the integrated sensor can be used in an open loop configuration or in a closed loop configuration in which an additional conductor is provided. The magntoresistance element may be formed over the silicon substrate or on a separate, non-silicon substrate. Also described is an integrated sensor comprising a substrate, a magnetic field transducer disposed over a surface of the substrate, and a conductor disposed over the surface of the substrate proximate to the magnetic field transducer. The magnetic field transducer can be a Hall effect transducer or a magnetoresistance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.