Multibit metal nanocrystal memories and fabrication
US7259984B2 · kind B2 · utility
39Cited by
14References
7Claims
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Key dates
| Filing date | Nov 24, 2003 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Feb 20, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Metal nanocrystal memories are fabricated to include higher density states, stronger coupling with the channel, and better size scalability, than has been available with semiconductor nanocrystal devices. A self-assembled nanocrystal formation process by rapid thermal annealing of ultra thin metal film deposited on top of gate oxide is integrated with NMOSFET to fabricate such devices. Devices with Au, Ag, and Pt nanocrystals working in the F-N tunneling regime, with hot-carrier injection as the programming mechanism, demonstrate retention times up to 106s, and provide 2-bit-per-cell storage capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.