Methods of growing a group III nitride crystal
US7261775B2 · kind B2 · utility
11Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2004 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Feb 9, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.