Systems and methods for thin film thermal diagnostics with scanning thermal microstructures
US7262066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Sep 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Systems and methods are described for identifying characteristics and defects in material such as semiconductors. Methods include scanning a thermal probe in the vicinity of a semiconductor sample, applying stimuli to the thermal probe, and monitoring the interaction of the thermal probe and the semiconductor. The stimulus can be applied by a variety of methods, including Joule heating of a resistor in the proximity of the probe tip, or optically heating a tip of the thermal probe using a laser. Applications of the invention include identification of voids in metallic layers in semiconductors; mapping dopant concentration in semiconductors; measuring thickness of a sample material; mapping thermal hot spots and other characteristics of a sample material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.