Method suitable for batch ion etching of copper
US7262139B2 · kind B2 · utility
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10References
7Claims
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Key dates
| Filing date | May 18, 2005 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | May 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching metal deposited on a substrate, the method comprising: depositing a metal layer above a substrate; coating at least a portion of the deposited metal layer with a photo-resist; pattering the photo-resist; etching the deposited metal layer with an inert gas plasma at an energy density of less than 0.5 Watt/cm2, the substrate being maintained at a temperature of less than 50° C.; and ashing a resultant crust with an ashing gas, the ashing gas comprising CF4 and O2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.