Solid-state imaging device
US7262396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2002 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Nov 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.