III-nitride semiconductor light emitting device having a silver p-contact
US7262436B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2005 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Apr 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/4847
Abstract
A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.