3D interconnect with protruding contacts
US7262495B2 · kind B2 · utility
332Cited by
15References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2004 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Aug 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.