Interconnection structure
US7262500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2005 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | May 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3326
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.