Semiconductor laser diode
US7263114B2 · kind B2 · utility
2Cited by
5References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2004 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Jul 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode is provided, including: an active layer; an upper clad layer formed above the active layer; a first lower clad layer formed below the active layer; a second lower clad layer formed under the first lower clad layer; and a substrate formed under the second lower clad layer, wherein a refractive index of the first lower clad layer is identical with a refractive index of the upper clad layer and is lower than a refractive index of the second lower clad layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.