Method of fabricating optoelectronic integrated circuit chip
US7264987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2004 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Oct 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.