Light emitting semiconductor device
US7265374B2 · kind B2 · utility
1,485Cited by
5References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Sep 1, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/773
Abstract
A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.