Ambipolar organic thin-film field-effect transistor and making method
US7265380B2 · kind B2 · utility
7Cited by
1References
6Claims
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Key dates
| Filing date | Mar 23, 2006 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Mar 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/311
Abstract
In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.