CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture
US7265397B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2001 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Feb 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.