Semiconductor-integrated circuit utilizing magnetoresistive effect elements
US7265580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2006 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Nov 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A semiconductor integrated circuit device has a plurality of circuit elements, a plurality of connection elements each of which becomes a conductive state or a nonconductive state, interconnects for supplying control signals for placing the connection elements in the conductive state or the nonconductive state, and a plurality of circuit selection switching elements, wherein said circuit selection switching elements are driven in response to the circuit configuration instruction signal, and control signals are output from the circuit selection switching elements. The connection elements may be magnetoresistance effect elements or resistance control elements which become the conductive state or the nonconductive state in accordance with application of a magnetic field. The circuit elements may also be magnetoresistance effect elements or resistance control elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.