Thick film technology based ultra high pressure sensor utilizing integral port and diaphragm construction
US7266999B2 · kind B2 · utility
20Cited by
10References
20Claims
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Key dates
| Filing date | Jan 30, 2006 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jan 30, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/0084
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for configuring a pressure sensor. A homogeneous piece of metal can be provided. A pressure port and a machined diaphragm are integrated onto the homogeneous piece of metal, wherein the machined diaphragm is connected to the pressure port. The machined diaphragm can be configured utilizing Advanced Thick Film (ATF) technology, thereby providing a high-pressure pressure sensor for use in high-pressure sensing application based on the pressure port and the machined diaphragm and related pressure sensor components thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.