Patent · US Expired

Multilayered structure, multilayered structure array and method of manufacturing the same

US7268017B2 · kind B2 · utility

2Cited by
0References
12Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 7, 2005
Grant dateSep 11, 2007
Priority date
Expiry dateJan 28, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/875

Abstract

The productivity of a multilayered structure etc. is improved by easily forming insulating films for insulating internal electrode layers from side electrodes. The multilayered structure includes: a first internal electrode layer including a first conducting material extending to a first side surface of the multilayered structure and having magnetism at a predetermined temperature and a second conducting material extending to a second side surface of the multilayered structure and having no magnetism at the predetermined temperature; a dielectric layer formed on the first internal electrode layer; a second internal electrode layer including the second conducting material extending to the first side surface and the first conducting material extending to the second side surface; a first insulating film formed on the first internal electrode layer in the first side surface; and a second insulating film formed on the second internal electrode layer in the second side surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.