Semiconductor device and method for manufacturing the same
US7268047B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2006 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Apr 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.