Process for fabricating semiconductor component
US7268063B1 · kind B1 · utility
20Cited by
86References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jan 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.