Thyristor-based memory and its method of operation
US7268373B1 · kind B1 · utility
34Cited by
18References
18Claims
0Family size
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Key dates
| Filing date | Sep 23, 2004 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jul 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor may contain a plurality of circuits each comprising at least one thyristor having a base region. The base region of at least one of the thyristors has a different doping profile than the others. When a bias circuit is used to bias the thyristors, the effect of biasing on the thyristors is found to be affected by the doping profile. In a specific embodiment, the doping concentration is higher near an electrode of the thyristor than near a supporting substrate. The different doping profiles can be achieved by using different ion implant energies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.