Inverted nitride-based semiconductor structure
US7268375B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2004 |
| Grant date | Sep 11, 2007 |
| Priority date | — |
| Expiry date | Jul 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A nitride-based semiconductor structure is provided. The structure includes an active layer that comprises an inverted quantum well structure that includes Indium and Nitrogen. The structure can be used to create a field effect transistor. In this case, the active layer forms an inverted active device channel. By including Indium and forming the inverted active device channel, a device having improved performance characteristics can be manufactured. Further, additional improvements, such as one or more additional layers, a second gate contact, and/or one or more field plates can be included in the device to obtain the desired performance characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.