BMEMS-type high-sensitivity inertial sensor and manufacturing process thereof
US7270003B2 · kind B2 · utility
26Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Jul 25, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01C19/5769
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The semiconductor inertial sensor is formed by a rotor element and a stator element electrostatically coupled together. The rotor element is formed by a suspended mass and by a plurality of mobile electrodes extending from the suspended mass. The stator element is formed by a plurality of fixed electrodes facing respective mobile electrodes. The suspended mass is supported by elastic suspension elements. The suspended mass has a first, larger, thickness, and the elastic suspension elements have a second thickness, smaller than the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.