Etch stop and hard mask film property matching to enable improved replacement metal gate process
US7271045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Sep 30, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including forming a hard mask and an etch stop layer over a sacrificial material patterned as a gate electrode, wherein a material for the hard mask and a material for the etch stop layer are selected to have a similar stress property; removing the material for the hard mask and the material for the etch stop layer sufficient to expose the sacrificial material; replacing the sacrificial material with another material. A system including a computing device including a microprocessor, the microprocessor including a plurality of transistor devices, at least one of the plurality of transistor devices including a gate electrode formed on a substrate surface; a discontinuous etch stop layer conformally formed on the substrate surface and adjacent side wall surfaces of the gate electrode; and a dielectric material conformally formed over the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.