Trench insulation in substrate disks comprising logic semiconductors and power semiconductors

US7271074B2 · kind B2 · utility

Assignee

• X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

• Ralf Lerner · Erfurt, DE
• Uwe Eckoldt · Hohenfelden, DE

Key dates

• Filing date: Oct 8, 2003
• Grant date: Sep 18, 2007
• Expiry date: Aug 6, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76286
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a layer arrangement (4b, 5b, 9b, 10, 9a, 5a, 4a) within an insulating trench, which insulates circuits with little distortion while being suitable for electrically insulating high-voltage power components (7) relative to low-voltage logic elements (6) that are integrated on the same chip (1, 2, 3). Also disclosed is the production of a sequence of alternating vertical layers in a trench (T). The electric strength for high voltages is improved while the influence of defects created by distortions of substrate disks is prevented.