Patent · US Expired

Method for dry etching fluid feed slots in a silicon substrate

US7271104B2 · kind B2 · utility

1Cited by
6References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2005
Grant dateSep 18, 2007
Priority date
Expiry dateSep 3, 2025

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B2201/052
  • WIPO fieldTextile and paper machines
  • WIPO sectorMechanical engineering

Abstract

A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more through slot locations to be etched through a thickness of the substrate. The semiconductor substrate is then etched with a dry etch process from the device side of the substrate to the fluid side of the substrate so that one or more through slots having a reentrant profile are formed in the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.