Photodetectors array with isolated pixels and storage grid, hybridized on a readout circuit
US7271375B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2003 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Oct 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13
Abstract
The invention relates to a photodetectors array that will be hybridized on a readout circuit (30) and realized from a wafer of semiconducting material (11). The wafer is divided into pixels (12), each pixel forming a photodetector, the pixels being separated from each other by separation means formed in the wafer and comprising a photogrid for photodetectors, each photodetector having a connection pad (18) to hybridize the photodetectors array to the readout circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.