Isolating phase change memory devices
US7271403B2 · kind B2 · utility
0Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Dec 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/231
Abstract
A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.