Light-emitting diode with openings formed in a stacked structure
US7271424B2 · kind B2 · utility
1Cited by
4References
27Claims
0Family size
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Key dates
| Filing date | Oct 27, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Jan 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A light-emitting diode has a sub-mount, a first conductivity type substrate deposed on the sub-mount, a reflector layer deposed between the sub-mount and the first conductivity type substrate, a first conductivity type buffer layer deposed on the first conductivity type substrate, a first conductivity type distributed Bragg reflector (DBR) layer deposed on the first conductivity type buffer layer, an illuminant epitaxial structure deposed on the first conductivity type distributed Bragg reflector layer, and a second conductivity type window layer deposed on the illuminant epitaxial structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.