High performance differential amplifiers with thick oxide devices for high impedance nodes
US7271651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Dec 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/4565
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit is described which uses a thick gate oxide device in the input stage and a thin gate oxide device in a second stage that is connected to the input stage. The input stage thick gate oxide device provides a low input gate leakage current. The thin gate oxide device in the second stage has high performance characteristics due to the use of the thin gate oxide device. The circuit thereby has high performance characteristics and low input gate leakage current. In various applications, the circuit may be, for example, an amplifier, a differential amplifier, a variable gain differential amplifier, or an operational amplifier in a sample and hold circuit. A guideline is provided where the thick gate oxide layer is about 1.5× the thickness of the thin gate oxide layer. Also, a design to control the circuit's common mode voltage using common mode voltage feedback is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.