Epitaxial layer for laser diode ridge protection
US7272161B1 · kind B1 · utility
2Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2003 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Jul 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser formed from a semiconductor wafer has an active layer, at last two optical cladding layers, and a ridge waveguide. A ridge top surface of the ridge waveguide is deposited from a first surface of the semiconductor laser wafer by a first height. A plurality of semiconductor mesas are formed on the semiconductor laser wafer and have mesa top surfaces disposed from the first surface by a second height greater than the first height so that the plurality of semiconductor mesas shield the ridge waveguide from mechanical damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.