Method for making thin-film semiconductor device
US7273774B2 · kind B2 · utility
1Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Apr 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.