Memory devices based on electric field programmable films
US7274035B2 · kind B2 · utility
20Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2004 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Aug 25, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or a inorganic oxide; and an electron donor and an electron acceptor of a type and in an amount effective to provide electric field programming. The films are of utility in data storage devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.