Front-illuminated-type photodiode array
US7274081B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Apr 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorption edge wavelength, λga, equal to or longer than the absorption edge wavelength, λgr, of the absorption layer (λga≧λgr).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.