Chemical sensor using chemically induced electron-hole production at a schottky barrier
US7274082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Aug 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, and molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.