Semiconductor-integrated circuit utilizing magnetoresistive effect elements
US7274207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2003 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Sep 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A semiconductor integrated circuit device has a plurality of circuit elements, a plurality of connection elements each of which becomes a conductive state or a nonconductive state, interconnects for supplying control signals for placing the connection elements in the conductive state or the nonconductive state, and a plurality of circuit selection switching elements, wherein said circuit selection switching elements are driven in response to the circuit configuration instruction signal, control signals are output from the circuit selection switching elements. As the connection elements, preferably use is made of magnetoresistance effect elements or resistance control elements which become the conductive state or the nonconductive state in accordance with application of a magnetic field. As the circuit elements, use can be made of magnetoresistance effect elements or resistance control elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.