Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
US7274720B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Mar 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.