Low temperature sintering ceramic composition for use in high frequency, method of fabricating the same and electronic component
US7276460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2003 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Feb 17, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO2 in sum total in the range of from 64.0 to 99.2% by mass; Bi2O3 in the range of from 0.4 to 33.0% by mass; Li2O in the range of from 0.4 to 3.0% by mass; and MgO and SiO2 are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.