Semiconductor device having trench capacitor and fabrication method for the same
US7276750B2 · kind B2 · utility
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4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2004 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Jan 20, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/906
Abstract
A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.