Fast Si diodes and arrays with high quantum efficiency built on dielectrically isolated wafers
US7276770B1 · kind B1 · utility
9Cited by
13References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2005 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Mar 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
Fast silicon diodes and arrays with high quantum efficiency built on dielectrically isolated wafers. A waveguide is formed in the top surface of the silicon that utilizes total internal reflection from the Si—Si Oxide interface to form an internal mirror. This mirror reflects incoming light into the waveguide cavity, with the light being trapped there by surrounding reflective interfaces. A masking layer may be used to define an input window. Individual diodes or linear arrays may be formed as desired. Some alternate embodiments are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.