Integrated light emitting device and photodiode with ohmic contact
US7277463B2 · kind B2 · utility
12Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2004 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Dec 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.