Patent · US Expired

Substrate for the micro-lithography and process of manufacturing thereof

US7279252B2 · kind B2 · utility

9Cited by

4References

21Claims

0Family size

Assignee

Schott AG · DE

Inventors

Lutz Aschke · Mainz, DE
Markus Schweizer · Klein-Winternheim, DE
Jochen Alkemper · Klein-Winternheim, DE
Axel Schindler · Ins, CH
Frank Frost · Leipzig, DE
Thomas Haensel · Grimma, DE
Renate Fechner · Leipzig, DE

Key dates

Filing date	Jan 7, 2004
Grant date	Oct 9, 2007
Priority date	—
Expiry date	Jun 3, 2025

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y40/00
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The invention relates to the manufacture of a substrate which is particularly suitable for EUV micro-lithography and comprises a base layer of low coefficient of thermal expansion (CTE) onto which at least one cover layer made of a semiconductor material is applied. Preferably, the cover layer is a silicon layer, preferably applied by ion beam sputtering. By an additional ion beam figuring treatment substrates of extremely accurate shape and extremely low roughness can be prepared.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.