Method for correcting pattern data and method for manufacturing semiconductor device using same
US7279259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Aug 20, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for correcting pattern data is provided which is capable of making a proper correction to data of a pattern having a complicated layout. A correction is made to pattern data affected by a proximity effect when a pattern is formed on a photomask or wafer according to design data for a semiconductor device, by detecting, according to the design data, a space portion being placed on a photomask or wafer and having a specified size occurring between patterns facing each other in a first direction, by producing pattern data corresponding to an assist pattern that fills the space portion, by detecting an edge to be corrected in a position being opposite to an edge of the assist pattern extending in a second direction between the patterns facing each other, out of framing portions of the pattern being placed in parallel and near to the assist pattern, by making a correction being independent of a correction to be made to other edge of the framing portion to the detected edge to be corrected, and by removing the assist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.