Ferroelectric memory
US7279342B2 · kind B2 · utility
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Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Aug 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
A ferroelectric memory includes a base member, a first dielectric layer formed above the base member, a second dielectric layer formed above the first dielectric layer, a contact hole that penetrates the first and second dielectric layers, a plug formed in the contact hole, and a barrier layer formed above the plug, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug. The second dielectric layer has a property that is more difficult to be polished than the plug and the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.