Plastically deformable irreversible storage medium and method of producing one such medium

US7279418B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Bernard Bechevet · Le Pont-de-Claix, FR
• Pierre Gaud · Saint-Martin-d'Hères, FR
• Veronique Sousa · Grenoble, FR

Key dates

• Filing date: Dec 2, 2004
• Grant date: Oct 9, 2007
• Expiry date: Dec 2, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The storage medium comprises an array of memory cells (3) which can be addressed by first (1) and second (2) conductors. Each memory cell (3) comprises one zone (10) of an active layer (8) which is initially electrically insulating and which can be made electrically conductive by means of localized plastic deformation (4), such as to selectively connect the first (1) and second (2) associated conductors. Binary information stored in the memory cell (3) is determined by the electrical conducting state of the corresponding zone (10) of the active layer (8). The active layer (8) can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer (8) which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.