Photodetector array
US7279729B2 · kind B2 · utility
10Cited by
8References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 19, 2004 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | May 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A photodetector array made in monolithic form, in which transistors are formed in a semiconductor substrate coated with several metallization levels and photodiodes are formed above a last metallization level, each photodiode having an upper region of a first conductivity type common to all photodiodes and an individual lower region forming a junction with the upper region in contact with a metallization of the last level, wherein each lower region is separated from the neighboring lower regions by an insulating material and is connected to the metallization through a via formed in at least one insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.