Method of manufacturing semiconductor device and semiconductor device
US7279776B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Jan 19, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon substrate has a protective film formed on each side. A semiconductor surface opening not smaller than a given region is formed by removing the protective film. A through-hole having an inner size smaller than the given region is formed in the opening by laser machining. Thereafter, the inner size of the through-hole is increased by anisotropic etching, and the etching is ended when the inner size of the through-hole reaches the given size. In this way, a through-hole of a given size can be formed without allowing reversely tapered crystal planes to appear from a surface of the substrate toward the inside of the through-hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.